pseudo-square mono c-Si ingot, 6 inch

GrowthMethod

CZ

ConductivityType

P

Dopant

Boron

Crystal Orientation

＜100＞±3°

GradeType

6N

Dislocation

<100/cm2

Diagonal

150±0.3 mm

Life Time

≥10μs

Oxygen Concentration oncentration

≤1.0×1018

Cross Section Side Length

125±0.5mm

Carbon

≤5.0×1016

Angle between adjacent sides

90±0.3°

Resistivity

0.5~3Ω.cm3~6Ω.cm

Surface Condition

Smooth,nocrack ,no scratch